Using the scanning probe capabilities, the group first succeeded in imaging single InAs self assembled quantum dots (SAD's) of typical size 300Å buried spatially beneath a Au/GaAs interface. The BEEM images show enhanced current through quantum dots located by the STM topography. Furthermore, BEEM current spectra (collector current vs. tip voltage) show structures at tip biases below the Schottky barrier threshold, when positioned above the dot. When the tip is positioned off the dot, no such structure is observed. The results provided the first evidence of resonant tunneling through a zero-dimensional (0D) state within an InAs SAD (see paper). Since this initial work, the group has studied the local conduction band offset of GaSb SAD's grown on GaAs, AlInP SAD's on GaAs and resonant tunnelling.